How can I eliminate a high output capacitance of a half-bridge switch using SCT1000N170 SiC MOSFETs?
Dear all,I have designed a high voltage switching circuit using a half-bridge topology which employs the SCT1000N170 SiC MOSFETS as the power switches. The aim is to apply the design as a pulsed-dc power supply for driving a magnetron sputtering gun....