Hi,
I am conducting research related to the change in thermal impedance during the failure of a SIC MOSFET, but I am finding it difficult to measure the same thermal impedance curve as in the datasheet when I start measuring. So I would like to ask how the thermal impedance curve in the SCT30N20 MOSFET datasheet is measured?
Is it calculated by loading the device with a constant heating power to bring it to a thermally stable state and then measuring the cooling curve? What should the heating power be? How long does the cooling time take approximately? In the data sheet the K value plateaus after 10^-1s, does it only take that short time for the temperature to cool down completely? And I noticed that the thermal impedance curve in the 9th edition is different from the 11th edition, which is the correct value?
Best regard,
Tianqi
