2017-10-09 06:37 AM
Hello everyone,
I've been reading the RM0316 Reference manual for STM32F303xB/C/D/E, STM32F303x6/8, STM32F328x8,
STM32F358xC, STM32F398xE advanced ARM � -based MCUs, DocID022558 Rev 8 and have noticed following issues:Page 70, Page Erase section, item 1 states: 'Check that no Flash memory operation is ongoing by checking the BSY bit in the FLASH_CR register', but the FLASH_CR register does not contain BSY bit. I assume the authors meant FLASH_SR instead.
Page 73, Option Byte Programming, first paragraph contains the following sentence: 'If not, the program operation is skipped and a warning is issued by the WRPRTERR bit in the FLASH_SR register.' After testing this, I've noticed that at least the STM32F303VCT6 will respond by setting the PGERR bit in the FLASH_SR register. This behavior also matches what happens when attempting to overwrite regular non-erased flash memory.
#documentation-error2017-10-09 07:06 AM
Hi
andreja.kostic
,You can do it here, in the STM32 forum. It will be helpful to precise that it is a documentation issue in the title of your post.
-Amel
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2017-10-10 07:40 AM
Hi
andreja.kostic
,I agree with you that:
These typos are raised internally for F3 and F0 reference manuals.Thanks for reporting them.
-Amel
To give better visibility on the answered topics, please click on Accept as Solution on the reply which solved your issue or answered your question.
2017-10-10 09:45 AM
Glad to be of assistance!