can I place application code in the high-cycle data flash memory?

[Snaku]

Hi,
In STM32H56xx, if both EDATA1_EN and EDATA2_EN are set to 0, can I place application code in the high-cycle data flash memory?

I am confused by these two descriptions in the reference manual:

1. “A threshold per bank (EDATA(1/2)_STRT) is programmable in user option bytes to determine the beginning of the data flash area. By default, all flash memory is used for code.”
2. “Attempt to fetch instructions from flash memory high-cycle data area.”