hi guys, I've been trying to write to internal flash for the last two weeks, and unfortunately, I didn't manage to do so. I worked with the function I have from the library and read in the manual.

[Gbasi.1]

tst= 0x121212121212

HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD,0x8000000,tst);

the address i took from the manual as well.

i cant understand whats going on, please help me.

thanks a lot

[berendi]

No, you did not.

What are the results of steps 4,5,6?

[Tesla DeLorean]

Probably going to want to look at reported error codes, and work on better diagnostic/telemetry output.

[Gbasi.1]

The thing is that i can write only to OTP address which i can not change after that

[Gbasi.1]

The thing is that i can write only to OTP address which i can not change after that

[berendi]

Fine, it works properly then.

[TDK]

OTP stands for one-time programmable. You can only program them once.

[Gbasi.1]

yes, the thing is i cant write it after that, i can write once and then read as many as i want. but i cant write in place that has been written before

[Gbasi.1]

my problem is that i can write only, i can not erase the data i wrote. i trying to delete it but i cant..

for (int i = 0; i < 10; i++){

EraseInitStruct.TypeErase=FLASH_TYPEERASE_PAGES;

EraseInitStruct.Banks=(uint32_t)0x01;

EraseInitStruct.Page=60+i;

EraseInitStruct.NbPages=2;

HAL_FLASHEx_Erase(&EraseInitStruct, &pageError);

}

[DNick.1]

Are you using your own board, or one of ST's reference boards?

I had a similar problem trying to consistently write to EEPROM and the problem turned out to be a noisy power rail. I needed to add a filter cap, and also a decoupling cap, to my board in order to get stable enough power for the writes to succeed. There is likely a similar requirement when erasing or writing to flash.

I hope that helps....