flash write versus erase cycles

[PR.10]

Hi,

when I write 8byte block sequentially 256 times in 2kB page and then erase and start over what is the total number of writes I can do?

Datasheet describes 10000 write/erase cycles, but I do not erase after every write.

If the damage is cause by erase should the flash last longer with 1 erase per 256 writes?

can I write 256 times before erase is necessary or it would somehow degrade other cells sooner?

if there is a formula for write/erase damage ratio what is it?

I use stm32g071 but I expect this to be common use case.

[Pavel A.]

>  should the flash last longer with 1 erase per 256 writes?

> can I write 256 times before erase is necessary

Yes and yes. 

[PR.10]

256x sound great, but it still does not explicitly defines the write limit:

if write is the problem it would be still about 10256

if they are equal it would be about 20000

if only erase is the problem it would up to 2550000

what is close to the reality for the internal flash?

[Andrew Neil · Accepted solution]

take a look at this recent thread on the topic:

https://community.st.com/t5/stm32-mcus-embedded-software/issues-with-x-cube-eeprom/m-p/662768#M46987

TL;DR: It's the Erase that causes the wear - not writing.

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@PR.10 wrote:

I use stm32g071 but I expect this to be common use case.

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Yes, it's a common property of all electrically-erasable PROM - not specific to STM32 or even to ST.