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Clarity on RAM STL Tests

developer3
Visitor

 

I am using STM32L476JE. I wish to use STL api to test 128kb of RAM as startup test for my device. I have come across some example codes but there seems to be confusion around the subsets.
If possible can you share an example code snippet for the same.
I have some doubts listed below:
1. Which method will be efficient to test 128 kb (since memory is large), is it advisable to use 

NumSectionsAtomic as 8 (which usually is kept 1 meaning 1 section (128 bytes) is tested at one go)
2. How exactly does STL_SCH_RunRamTM run?
3. Which one is correct? 
 RamSubset.EndAddr = TEST_RAM_START_ADDR + RAM_NUMBER_OF_SECTIONS * RAM_SECTION_SIZE - 1; 
OR
 RamSubset.EndAddr = TEST_RAM_START_ADDR + RAM_NUMBER_OF_SECTIONS * RAM_SECTION_SIZE;
4. Which is the best way to test such large memory with STL?
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