2021-08-16 12:07 PM
What would be a minimum driving voltage requirement for your SiC MOFET. I saw a picture in Onsemi's datasheet, showing the relationship between Rdson as a function of gate driver voltage, at different temperatures.
Do you have a similar curve for your SiC MOSFET?
Thanks.
Bing
Solved! Go to Solution.
2021-08-20 01:09 AM
Welcome, @BLu.4, to the community!
Well, that's a question of point of view: SiC datasheets from STMicroelectronics contain something comparable - the Transfer characteristics, i.e. the dependence of the drain current on the gate-source voltage at several temperatures, e.g. at 200 DEGC. The question now is which is more relevant in practice.
Regards
/Peter
2021-08-20 01:09 AM
Welcome, @BLu.4, to the community!
Well, that's a question of point of view: SiC datasheets from STMicroelectronics contain something comparable - the Transfer characteristics, i.e. the dependence of the drain current on the gate-source voltage at several temperatures, e.g. at 200 DEGC. The question now is which is more relevant in practice.
Regards
/Peter