2024-09-08 06:26 AM
Hi Team,
Working on a custom design using STM32H750 and 2 Winbond W989D6DBGX6E LPSDR memory devices configured for 32b bus.
The Design passes memory test at FMC_SDCLK@80Mhz.
The Design fails memory test at FMC_SDCLK@100Mhz.
When checking the signal timing, FMC_SDNWE was observed as marginal.
The design configured I/O High Speed Low voltage and I/O compensation.
Checking the IO types for FMC_SDNWE io pins, the pin options DO NOT indicate the pin is _h type for High speed low voltage.
What would be the cause of the timing violation?
2024-10-09 06:38 AM
Hello @James Panko,
Which STM32H750 rev are you using? Is it rev Y or rev V?
Could you please check your PCB? What is the value of capacitance load are you use?
Thank you.
Kaouthar
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2024-10-09 01:44 PM
Hi Kaouthar,
FMC_SDNWE total capacitance: 12pF total (PCB trace - 6pF + SDRAM 1 - 3pF + SDRAM 2 - 3pF)
FMC_SDCLK total capacitance: 12pF total (PCB trace - 6pF + SDRAM 1 - 3pF + SDRAM 2 - 3pF)
Regards,
Jim
2024-10-09 01:46 PM
Hi Kaouthar, STM32H750XBH6TR Rev V Microcontroller, ARM Cortex M7, 400Mhz, 128kB Flash, JPEG, 240+25 TFBGA part is specified.
Regards,
Jim
2024-10-10 01:17 AM - edited 2024-10-10 01:17 AM
Hello @James Panko ,
As mentioned in the datasheet, all timing tables are guaranteed for the following FMC_SDCLK maximum values and for capacity load condition:
• For 2.7 V<VDD<3.6 V: FMC_SDCLK =110 MHz at 20 pF
• For 1.8 V<VDD<1.9 V: FMC_SDCLK =100 MHz at 20 pF
• For 1.62 V<DD<1.8 V, FMC_SDCLK =100 MHz at 15 pF
May be this extra delay is due to capacity load.
Thank you.
Kaouthar
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