Writing full flash page does not work

[sde c.1]

Hi !

I try to write 2048 Bytes at once to flash.

I do a page erase first of page 31.

EraseInitStruct.TypeErase   = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Banks = FLASH_BANK_1 ;
EraseInitStruct.Page = 31;
EraseInitStruct.NbPages     = 1;

the description of the HAL library is not clear, what do they mean with "Fast program a 32 row double-word (64-bit) at a specified address.".

I understand a double word as 32 bit, but the HAL comment says 64 bit?

What do they mean with 32 row ? 32 x double word?

its confusing.

my device is a 65k device STM32G431C8T

PageData is a buffer of 2048 Bytes (uint8_t).

FLASH_EEPROM_BASEADDR = 0x0800F800.

When i execute flash_page_write(FLASH_EEPROM_BASEADDR,(uint64_t*)PageData);

i get HAL_ERROR wirh error code 1010100000

flash_status flash_page_write(uint32_t address, uint64_t *data) {
	HAL_FLASH_Unlock();
	if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_FAST_AND_LAST, address, *data)
			!= HAL_OK) {
		return FLASH_ERROR_WRITE;
	}
	HAL_FLASH_Lock();
	return FLASH_OK;
}

Thank you

[Gumer RoMa]

In the instruction HAL_FLASH_Program(FLASH_TYPEPROGRAM_FAST, address, *data), the last argument should be an address if your are using FAST mode. I use

(uint64_t)(uintptr_t)data

My function is similar to yours, the flashing address is aligned with a double word and page address, but still doesn't work.

[Tesla DeLorean]

You are correct, operating blindly here, in a form equivalent to the OP, I have changed that now.

Does ST have expectations that this needs to run from RAM, or without interrupts?

[Gumer RoMa]

I found my mistake, fast programming requires a mass erase, but I was doing just a page erase of multiple pages.

Thanks for your replies.