DeadTime on ELVSTDRIVEG611

[Ice_64]

Hi  , 

I've a question regarding the EVB in the subject , in the Data brief the Deadtime , with the pot in the center , is about 700ns , that seems to me a lot for the GaN device used .

In the previous version ( EVSTDRIVEG60015 ) it was 100ns with the same GaN , is possible to know the reason for a higher value ?

Thanks

Ice

[Cristiana SCARAMEL · Accepted solution]

Hello @Ice_64 and welcome to the ST Community.

The EVLSTDRIVEG611 have been specifically designed for motor control application to obtain dV/dt (output slow rate) lower than 10 V/ns as required on the vast majority of customer designs of this field.

To achieve such dV/dt, it is required to drive much more slowly GaN gates and longer dead time is required compared to power conversion applications. So gate network and dead time range have been set accordingly.

The EVLSTDRIVEG610Q targets power conversion applications with higher dV/dt; PCB, gate network and dead time have been designed accordingly. PCB, gate network and dead time settings are like EVSTDRIVEG60015, leading to hard-on dV/dt in the 40 V/ns range.

The user is however free to change gate network and dead time setting to fit its own applications.