Hi,
no internal gate resistance is given in ds - so we can assume : there is no "extra" internal gate resistance .
The "remainig" resistance is just the gate contact distribution , maybe < 1 ohm.
So from ds : with 4r7 at gate, mosfet switches ON after 33ns , in about 57ns , to 55A drain current.
Lets try simu at the gate : 4r7 at 8nF ->
The 6v level, mosfet begins to switch on, is at about 20ns ; so there cannot be much internal gate resistance .
lets try ...adding 2 ohm:
Now current rise will be after about 30ns , good match with the 33ns from ds;
so internal resistance at gate might be something around 1...2 ohms.
