Dear STMicroelectronics Support Team,
We have observed a discrepancy between two STUSB documents regarding the default configuration of the VBUS discharge feature:
- STUSB Datasheet / Online Document (Section 3.4.2 and 5.2) [Link: @STUSB4500.html]
It states that the VBUS discharge feature is enabled by default in the NVM and can be disabled through NVM programming.- Parameter: VBUS_DISCH_DISABLE
- Default Value: 0b (VBUS discharge enabled)
- Description: Setting to 1b disables the discharge function.
- Programming Guide (Section 3.23) [Link: @STUSB_programming_guide.pdf]
It specifies that the VBUS_DISCHARGE_EN bit is disabled by default:- Address: STUSB_BLOCKBaseAddress + 0x26
- Type: R/W
- Reset: 0x00 (initialized by NVM)
- Bit [7]: VBUS_DISCHARGE_EN
- 0: Disable the forced assertion of VBUS discharge path
- 1: Enable the forced assertion of VBUS discharge path
Due to this apparent contradiction - one document indicating that the VBUS discharge feature is enabled by default, while the other indicates it is disabled - we would like clarification on which information is correct.
We referred STUSB4500_NVM.pdf and couldn't see following configuration parameters. Please provide additional information (specific NVM bank and bit locations) to configure these parameters
- VBUS_DISCH_DISABLE
- VBUS_DISCHARGE_EN
Note that we are not using GUI tool for programming, so software has been written to update parameters.
Best regards,
Ashwin
