Rise/Fall Time Issue with STW3N170 in H-Bridge to test High dv/dt test setup for our sensor using driver used UCC21330

[Narana162]

I'm using MOSFET STW3N170 in an H-Bridge configuration along with TI’s gate driver UCC21330. During testing, observed an issue with the switching speed as the test is for high dv/dt

Observed Behavior:

• • Rise time ≈ 5 µs
  • Fall time ≈ 5 µs
• Test Conditions:
  • Gate resistance: 2.2 Ω
  • Gate driver isolated pulse rise time: ~30 ns
• Expectation:
  • As per the STW3N170 datasheet, the rise and fall times are specified in the nanosecond range, but the MOSFET switching is significantly slower.

This slower rise/fall is limiting dv/dt performance, which is critical for our H-Bridge application. Could you please advise:

1. If there are any specific considerations when using MOSFET STW3N170 with high-speed drivers like UCC21330.
2. Whether additional circuit or layout recommendations are required to achieve faster switching.