2025-09-11 9:31 PM - last edited on 2025-09-14 11:10 AM by Peter BENSCH
I'm using MOSFET STW3N170 in an H-Bridge configuration along with TI’s gate driver UCC21330. During testing, observed an issue with the switching speed as the test is for high dv/dt
Observed Behavior:
This slower rise/fall is limiting dv/dt performance, which is critical for our H-Bridge application. Could you please advise:
2025-09-14 11:09 AM
Welcome @Narana162, to the community!
Well, the STW3N170 can certainly meet the specifications if the environmental conditions allow it, which includes not only the layout and the gate driver, but also the devices located between that driver and the gate. Perhaps someone can take a look if you insert the schematics and the layout excerpt here as an image. However, only the manufacturer or their support forum will be able to help you with the gate driver.
Regards
/Peter
2025-09-14 11:59 AM
30ns -> 5us .... Whats the test condition for the mosfet ? load ? circuit ?
Seems you look at a not loaded output, so you see the slow rise/fall, just charging the capacities.
You have to test it with some load !