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Possible counterfeit: TSD4M250AV

guilleDMUPM
Visitor

Hi everybody!
I´m repairing a big ClassD amplifier from the 90s and I needed to replace four old TSD4M250V mosfet isotop modules. I tried with modern parts (IXFN140N20P from IXYS), without fails or smoke troubles, but they not working correctly (the control board says "overcurrent fault", probably because they are giving more output current than spected). Now I bought the (supposed) originals from https://www.IC-Components.com and they arrived. They look too modern, too shiny and have with a totaly different aspect. My first impression was of course that they are counterfeit parts. But I really don´t know when ST stops the production... Can they be from another batches from, i.e., the 2000s or something like that?
I am afraid of putting them in the amp (a 5kW specimen) and create a total disaster burning lots components.
Can you help me? Are they fake? Can I use another equivalent part?
Many thanks in regards!

1 REPLY 1
Peter BENSCH
ST Employee

Welcome @guilleDMUPM, to the community!

Just how trustworthy the dealer's product website is can be seen from its description, in which it refers to the device as an IGBT. You were almost certainly sold counterfeits because these devices have not been produced since the early 90s of the last millennium. Since you can't refer to any data sheets for such counterfeits and can't even estimate the behaviour, I can only advise against using them in such an infernal power machine.

Unfortunately, I am not aware of a direct replacement. At first glance, the IXFN140N20P appears to be a pin-compatible replacement, but it differs significantly in some respects:

  • Gate Threshold Voltage: 2.5-5V instead of previously 2-4V
  • Rdson max 18mohms instead of the previous 14mohms

Incidentally, the power amp MOSFET in a Class-D amp cannot supply too much current, but at most be driven incorrectly or insufficiently. The gate threshold voltage in particular, which may be at the upper end of the IXFN140N20P, would then lead to inadequate switching of the MOSFET. However, the gate resistor also plays a decisive role and must be adapted to the parameters of the MOSFET for such power classes. However, without detailed schematics of the output stage and data sheets for the ICs, which have presumably also been discontinued, it is difficult to make a recommendation.

Regards
/Peter

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