Writing to internal flash STM32L422KBT6

[YShe.1]

Hi I hove something trobels with writing data after erease. I have only option bank and page erease and nothing other. I doing a bank1 erease and after this tryuing to write something whith is complitly not writing to memeory. Only on another compilation if memory is eresed I have data writen. How to clean and then write data? Im writing a uint16_t like a doble word, also I have only duble word. This making me cry, plese help just make a data rewrite, like it should be. I not wish have additional function for erease. Many thanks.

#define FLASH_START_ADDRESS 0x08010000
 
// Function to erase the flash memory
void erase_flash()
{
  // Unlock the flash memory for writing
  HAL_FLASH_Unlock();
 
  // Initialize the erase configuration structure
  FLASH_EraseInitTypeDef erase_init;
  erase_init.TypeErase = FLASH_TYPEERASE_MASSERASE;  // Mass erase the flash memory
  erase_init.Banks = FLASH_BANK_1;  // Select the bank of the flash memory to erase
 
  // Perform the erase operation and store any errors
  uint32_t flash_error;
  HAL_FLASHEx_Erase(&erase_init, &flash_error);
 
  // Lock the flash memory after erasing is complete
  HAL_FLASH_Lock();
}
 
// Function to write data to the flash memory
void write_flash(uint16_t *data, uint32_t size)
{
  // Unlock the flash memory for writing
  HAL_FLASH_Unlock();
 
  // Iterate over the array of data and write each element to the flash memory
  uint32_t i, flash_error;
  for (i = 0; i < size; i++)
  {
    // Convert the 16-bit data to a 64-bit value and write it to the flash memory
    uint64_t value = *(data + i);
    flash_error = HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, FLASH_START_ADDRESS + i * 8, value);
 
    // Handle any errors that occur during the write operation
    if (flash_error != HAL_OK)
    {
      // Insert code to handle the error here
    }
  }
 
  // Lock the flash memory after writing is complete
  HAL_FLASH_Lock();
}

[Tesla DeLorean · Accepted solution]

Try, put what you want in a structure, pass in casted base address of structure, and size in bytes

/**
  * @brief  Gets the page of a given address
  * @param  Addr: Address of the FLASH Memory
  * @retval The page of a given address
  */
static uint32_t GetPage(uint32_t Addr) // Single Bank Device
{
  return((Addr - FLASH_BASE) / FLASH_PAGE_SIZE);
}
 
// Function to write data to the flash memory
//  BYTE pointer, Size in BYTES, put what you want in a STRUCTURE
 
void write_flash(uint8_t *data, uint32_t size)
{
  FLASH_EraseInitTypeDef EraseInitStruct = {0};
  uint32_t addr = FLASH_START_ADDRESS; // 64-bit aligned 
  uint64_t value;
  uint32_t PageError;
 
  size = (size + 7) & ~7; // Round to 64-bit words
 
  // Unlock the flash memory for writing
  HAL_FLASH_Unlock();
 
  /* Clear OPTVERR bit set on virgin samples */
  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);
 
  /* Fill EraseInit structure, spanning size of write operation */
  EraseInitStruct.TypeErase   = FLASH_TYPEERASE_PAGES;
  EraseInitStruct.Banks       = FLASH_BANK_1;
  EraseInitStruct.Page        = GetPage(addr); // Starting Page
  EraseInitStruct.NbPages     = GetPage(addr + size) - EraseInitStruct.Page + 1; // Page Count, at least 1 
 
  if (HAL_FLASHEx_Erase(&EraseInitStruct, &PageError) != HAL_OK)
  {
     // Insert code to handle the error here
 
    HAL_FLASH_Lock();
    return;
  }
	
  size /= sizeof(uint64_t); // Byte count to 64-bit word count
 
  // Iterate over the array of data and write each element to the flash memory
  while(size--)
  {
    memcpy(&value, data, sizeof(uint64_t)); // alignment safe copy of byte array into 64-bit value
 
    if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, addr, value) != HAL_OK)
    {
      // Insert code to handle the error here
 
      HAL_FLASH_Lock();
      return;
    }
 
 
    addr += sizeof(uint64_t); // Advance address
    data += sizeof(uint64_t); // Advance byte buffer
  }
 
  // Lock the flash memory after writing is complete
  HAL_FLASH_Lock();
}