Quick question concerning L0 internal EEPROM...
From RM0377, page 79:
Write to data EEPROM
...
Description
This operation aims at writing a word or a part of a word in the data EEPROM. The user
must write the right value at the right address and with the right size. The memory
interface automatically executes an erase operation when necessary (if all bits are
currently set to 0, there is no need to delete the old content before writing). Similarly, if
the data to write is at 0, only the erase operation is executed.
So no erasing necessary, simply over-writing eeprom is okay?
This is so unusually comfortable (compared to internal flash workings), that I better ask...
