STM32H7 read while erase Flashbank and sector erase time

[Schmesterle]

Hello

I'm working on a STM32H743 and do have a question regarding read/write/eraseoperation on a flash bank. The h743 does have 2 Flash banks which are connected each to the axi bus.

Reference manual says that it is possible to erase an sector on one bank while reading and executing code on the other bank. is this correct? So if i'm implement an emulated eeprom which stores it's data only on bank 2 and the code is stored only on bank 1 it is possible to start an erase procdure while managing interrupts and other code?

Another question i have is the erase time which i read from DS12110 Rev 5 Table 52.

Does the H7 really needs 1,8s to erase 128Kb of Flash?