I use HAL_FLASH_Program to program my internal flash, but it takes too much time, I program about 90kbytes, it will take about 90 seconds. Is there any faster way to program stm32l072.

[ZXiao.1]

my pagesize is 256 bytes, and 90k is about 351 pages

  for(i = 0; i < pages; i++)

  {

    W25qxx_ReadPage((uint8_t *)u32_databuf, EXT_FLASH_ADDR_APP_START + i,0, w25qxx.PageSize);

    ProgramInternalFlash(APP_BASE_ADDR + i * w25qxx.PageSize, u32_databuf,w25qxx.PageSize);

  }

void ProgramInternalFlash(uint32_t u32_intFlashstart, uStruct_u32 *pData ,uint32_t data_len)

{

 HAL_FLASH_Unlock();

 /* Fill EraseInit structure*/

 EraseInitStruct.TypeErase  = FLASH_TYPEERASE_PAGES;

 EraseInitStruct.PageAddress = u32_intFlashstart;

 EraseInitStruct.NbPages   = data_len / FLASH_PAGE_SIZE;

 if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK)

 {

   Error_Handler();

 }

  

 Address = u32_intFlashstart;

 uint16_t i = 0;

 while (Address < u32_intFlashstart + data_len)

 {

    

  if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, Address,pData[i].u32_buf) == HAL_OK)

  {

   Address = Address + 4;

   i += 1;

  }

  else

  {

    Error_Handler();

  }

 }

 HAL_FLASH_Lock();

   

}

[Tesla DeLorean]

Perhaps it is your W25Q routines which are slowing. See ​how fast it runs without those for a test/baseline.

[ZXiao.1]

No, I have comment the code W25qxx_ReadPage, the result is same.

[ZXiao.1]

is there any DMA code to move memory to internal flash code example or use interrupt for flash code?

[TDK]

It's possible erasing all pages at once would be faster than one at a time.

There is HAL_FLASH_Program_IT, but unlikely to help if the bottleneck is the flash erase/write speed.

[ZXiao.1]

Thank you for your advice. i have moved all erase code before write code.

firstly i EraseInternalFlash(APP_BASE_ADDR,APP_LENGTH ); erase all my app code.

[ZXiao.1]

i use the code below follow the code examples on page938 of RM0376 Reference manual , it will reduce the time to 9 seconds.The note was under the code Note: This function must be loaded in RAM. I'm not sure can this code run in flash? and why only program half page instead of 1 page?

/**

* This function programs a half page. It is executed from the RAM.

* The Programming bit (PROG) and half-page programming bit (FPRG)

* is set at the beginning and reset at the end of the function,

* in case of successive programming, these two operations

* could be performed outside the function.

* This function waits the end of programming, clears the appropriate

* bit in the Status register and eventually reports an error.

* Param flash_addr is the first address of the half-page to be programmed

* data is the 32-bit word array to program

* Retval None

*/

__RAM_FUNC void FlashHalfPageProg(uint32_t flash_addr, uint32_t *data)

{

  uint8_t i;

  /* (1) Set the PROG and FPRG bits in the FLASH_PECR register

  to enable a half page programming */

  /* (2) Perform the data write (half-word) at the desired address */

  /* (3) Wait until the BSY bit is reset in the FLASH_SR register */

  /* (4) Check the EOP flag in the FLASH_SR register */

  /* (5) clear it by software by writing it at 1 */

  /* (6) Reset the PROG and FPRG bits to disable programming */

  FLASH->PECR |= FLASH_PECR_PROG | FLASH_PECR_FPRG; /* (1) */

  for (i = 0; i < ((FLASH_PAGE_SIZE/2) / 4); i++)

  {

    *(__IO uint32_t*)(flash_addr) = *data++; /* (2) */

  }

  while ((FLASH->SR & FLASH_SR_BSY) != 0) /* (3) */

  {

    /* For robust implementation, add here time-out management */

  }

  if ((FLASH->SR & FLASH_SR_EOP) != 0) /* (4) */

  {

    FLASH->SR = FLASH_SR_EOP; /* (5) */

  }

  else

  {

    /* Manage the error cases */

  }

  FLASH->PECR &= ~(FLASH_PECR_PROG | FLASH_PECR_FPRG); /* (6) */

}