Question
Delete (mass erase) flash bank 2 on STM32F429II
Posted on November 27, 2014 at 14:06
I have a STM32F429II with 2 x 1MB flash memories. It supports Read-While-Write on the flash banks. I have written code to write/read to the flash memory bank 2 and my application is on the flash bank 1. I have also written function to delete a sector and to do a mass erase on the whole bank 2. The sector delete function works, but the mass erase aborts the debugging process and it does look like it does not work.
I am using the HAL STM32F4 library version 1.3.0. The test code I have written writes some data to the start of the first and second sector (sector 12 and 13)of flash bank 2. I am watching the start of the memory of both sectors in Keil uVision 5 using the memory windows and then try to execute the flash bank 2 mass erase, but then the debugging aborts and the memory seems to get random value just before it quits. This is the code:#include ''stm32f4xx_hal.h''
void main (void)
{
FLASH_EraseInitTypeDef eraseInit;
uint32_t error;
//Reset of all peripherals, Initializes the Flash interface and the Systick.
HAL_Init();
//Configure clock and flash latency.
SystemClock_Config();
//Unlock flash access.
HAL_FLASH_Unlock();
//Write a word to the start of sector 12 and sector 13 of bank 2.
HAL_FLASH_Program(TYPEPROGRAM_WORD, 0x08100000, 0x12345678);
HAL_FLASH_Program(TYPEPROGRAM_WORD, 0x08104000, 0x87654321);
//Lock flash access.
HAL_FLASH_Lock();
//Configure mass erase parameters.
eraseInit.TypeErase = TYPEERASE_MASSERASE;
eraseInit.Banks = FLASH_BANK_2;
eraseInit.VoltageRange = VOLTAGE_RANGE_3;
//Unlock flash access.
HAL_FLASH_Unlock();
/*** This is the line that aborts the debugging... ***/
HAL_FLASHEx_Erase(&eraseInit, &error);
//Lock flash access.
HAL_FLASH_Lock();
//Infinite loop.
while(1)
{
}
}
void SystemClock_Config(void)
{
RCC_OscInitTypeDef RCC_OscInitStruct;
RCC_ClkInitTypeDef RCC_ClkInitStruct;
RCC_PeriphCLKInitTypeDef PeriphClkInitStruct;
__PWR_CLK_ENABLE();
__HAL_PWR_VOLTAGESCALING_CONFIG(PWR_REGULATOR_VOLTAGE_SCALE1);
RCC_OscInitStruct.OscillatorType = RCC_OSCILLATORTYPE_LSI|RCC_OSCILLATORTYPE_HSE
|RCC_OSCILLATORTYPE_LSE;
RCC_OscInitStruct.HSEState = RCC_HSE_ON;
RCC_OscInitStruct.LSEState = RCC_LSE_ON;
RCC_OscInitStruct.LSIState = RCC_LSI_ON;
RCC_OscInitStruct.PLL.PLLState = RCC_PLL_ON;
RCC_OscInitStruct.PLL.PLLSource = RCC_PLLSOURCE_HSE;
RCC_OscInitStruct.PLL.PLLM = 8;
RCC_OscInitStruct.PLL.PLLN = 336;
RCC_OscInitStruct.PLL.PLLP = RCC_PLLP_DIV2;
RCC_OscInitStruct.PLL.PLLQ = 7;
HAL_RCC_OscConfig(&RCC_OscInitStruct);
RCC_ClkInitStruct.ClockType = RCC_CLOCKTYPE_SYSCLK|RCC_CLOCKTYPE_PCLK1
|RCC_CLOCKTYPE_PCLK2;
RCC_ClkInitStruct.SYSCLKSource = RCC_SYSCLKSOURCE_PLLCLK;
RCC_ClkInitStruct.AHBCLKDivider = RCC_SYSCLK_DIV1;
RCC_ClkInitStruct.APB1CLKDivider = RCC_HCLK_DIV4;
RCC_ClkInitStruct.APB2CLKDivider = RCC_HCLK_DIV2;
HAL_RCC_ClockConfig(&RCC_ClkInitStruct, FLASH_LATENCY_5);
PeriphClkInitStruct.PeriphClockSelection = RCC_PERIPHCLK_RTC;
PeriphClkInitStruct.RTCClockSelection = RCC_RTCCLKSOURCE_LSE;
HAL_RCCEx_PeriphCLKConfig(&PeriphClkInitStruct);
HAL_RCC_MCOConfig(RCC_MCO1, RCC_MCO1SOURCE_PLLCLK, RCC_MCODIV_2);
}