STM32L4R5ZI - Is it possible to erase a page and write a double word in Flash ?
Hi,
I am using STM32L4R5ZI MCU (Nucleo kit). My application demands non-volatile storage of few configuration parameters. I am using 2 banks mode. I want to store a double word at location 0x8100000 which is first page of bank 2. I tried the STM32L4R5ZI_NUCLEO_FLASH_EraseProgram example code that was available from ST webpage. But am getting unpredictable results. Sometimes It works. But most of the times, Erase operation was not successful. All I was trying is, ensure the double word is properly saved at first page of the 2nd bank everytime i write with new value. Why there is inconsistency in erasing the flash memory ?
