EVLSTGAP3SXS-H Usage and Limitations
I'm hoping to use the EVLSTGAP3SXS-H as a half-bridge converter for active charge balancing on a battery energy storage system, but I have a few questions about the data sheet provided in the products page.
- Bus voltage rating
The data brief limits the high-voltage rail to 520 V "by the MOSFET's and capacitor's rating". However, the SCTWA70N120G2V-4 MOSFETs are rated for 1200 V and C4 is listed as 3.3 µF / 1.1 kV. The description also says the bus can be raised to 1200 V by replacing the MOSFETs and C4, which already appear to be 1200 V / 1.1 kV parts. What component or design limit actually sets the 520 V rating (for example PCB clearance/creepage, the R1/R2/R83 resistors, startup overshoot without precharge, or another part)? Can the board be operated at up to 700 V DC as supplied? If not, which parts would need to be changed?
- Output current and PCB copper
We need to run 10 A continuous (DC average, with ripple) through the HV, OUT and GND_PWR paths. What is the copper weight and minimum trace/pour width on the power paths? What is the continuous current rating of the HV, OUT and GND_PWR connections? Is the board intended for continuous switching operation at this current, or mainly for gate driver evaluation (e.g. double-pulse testing)?
If full design files (Gerbers or layer stack-up) are available for this board, I would greatly appreciate a copy.