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M24LR EEPROM write cycle endurance?

Question asked by Derick Cochrane on Nov 6, 2017
Latest reply on Dec 20, 2017 by Jean-Louis Labyre


I am working on a project is using the M24LR NFC device as an intermediate Communication device between a target temperature sensing MCU and the CR95HF reader. We do not require a 'high bandwidth' throughput, only occasionally will we need to transmit data through the M24LR 'RF visible' eeprom memory. We would like to know if we need to employ Forward Error Correction with our data packets as we are unsure of the reliability of the EEPROM. The data sheet quotes a 'max write endurance cycle endurance' of 1,000,000 cycles. Does this figure mean that 1,000,000 erase/write cycles can be performed to an eeprom block (4 bytes) BEFORE a single failure is expected to occur? Do we need a FEC system at all? Should we employ a 'wear leveling' technique to cycle through memory rather than writing to the same area continuously? Any clarification on this matter would be appreciated.

Many thanks,