2024-08-08 05:01 AM
Thank you for reading.
I am trying to use the STM32H735 for PSRAM memory reading and writing. The PSRAM model is ISS66WVO32M8DBLL.
In all the materials I read, it is stated that DQS should be enabled. But in fact, when I set it this way, it will make the data offset more severe, which is why?
The situation is as follows:
Use indirect mode to write 16 numbers to PSRAM memory, then read, when I disable DQSM, read data offset by 1 bit, the first data read more than once, the last data was chipped off; When I enabled DQSM, the data shifted even more, and there were even problems of data overread and misread. The change of address and the data volume phenomena are consistent, so I have reason to doubt whether the bit can be aligned when reading the data?
Below I will provide my key code, thank you for helping to answer questions!
2024-08-08 05:56 AM
Hello @Lin_Yishan ,
Could you please take a look at the STM32H735 errata sheet and check the different conditions for DQS configuration and the workaround:
Also could you please refer to memory datasheet and check the dummy cycle.
May this discussion can help you Solved: External Flash downloader shift 1 byte in flash ar... - STMicroelectronics Community
I hope this help you!
Thank you.
Kaouthar
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