Posted on May 23, 2018 at 13:54I am writing a bootloader application that resides in sectors_0 (0x08000000-0x08003FFF) and sector_1 (0x08004000-0x08007FFF) of stm32f429. When the bootloader application starts up it erases sector_2(0x08008000-0x0800BFFF) and sector_3(0x0800C000-0x0800FFFF) of the flash memory. Then loads the main code from an SDCARD and writes it to sector_2 and sector_3.
I can successfully erase sector_2 and sector_3 but when trying to write to them, I get HAL_ERROR.
This is the relevant code:
/* Unlock the Flash to enable the flash control register access *************/
volatile uint32_t main_addr = 0x08008000;
FLASH_If_Init();
FlashProtection = FLASH_If_GetWriteProtectionStatus();
pEraseInit.TypeErase = TYPEERASE_SECTORS;
pEraseInit.Sector = FLASH_SECTOR_2;
pEraseInit.NbSectors = 2;
pEraseInit.VoltageRange = VOLTAGE_RANGE_3;
if (HAL_FLASHEx_Erase(&pEraseInit, &SectorError) != HAL_OK)
{
/* Error occurred while page erase */
while (1);
}
if(FLASH_If_Write(main_addr, (uint32_t *)buffer, (fno.fsize)/4)!= FLASHIF_OK) //writes are 32 bit
{
//error
while(1);
}
Functions being used have been defined in the CUBE project section: STM32Cube\Repository\STM32Cube_FW_F4_V1.21.0\Projects\STM32446E_EVAL :
/**
* @brief Unlocks Flash for write access
* @param None
* @retval None
*/
void FLASH_If_Init(void)
{
HAL_FLASH_Unlock();
/* Clear pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
}
/**
* @brief This function writes a data buffer in flash (data are 32-bit aligned).
* @note After writing data buffer, the flash content is checked.
* @param FlashAddress: start address for writing data buffer
* @param Data: pointer on data buffer
* @param DataLength: length of data buffer (unit is 32-bit word)
* @retval 0: Data successfully written to Flash memory
* 1: Error occurred while writing data in Flash memory
* 2: Written Data in flash memory is different from expected one
*/
uint32_t FLASH_If_Write(uint32_t FlashAddress, uint32_t* Data ,uint32_t DataLength)
{
uint32_t i = 0;
for (i = 0; (i < DataLength) && (FlashAddress <= (USER_FLASH_END_ADDRESS-4)); i++)
{
/* Device voltage range supposed to be [2.7V to 3.6V], the operation will
be done by word */
if (HAL_FLASH_Program(TYPEPROGRAM_WORD, FlashAddress, *(uint32_t*)(Data+i)) == HAL_OK)
//<<<<<<<<<This line returns a HAL_ERROR
{
/* Check the written value */
if (*(uint32_t*)FlashAddress != *(uint32_t*)(Data+i))
{
/* Flash content doesn't match SRAM content */
return(FLASHIF_WRITINGCTRL_ERROR);
}
/* Increment FLASH destination address */
FlashAddress += 4;
}
else
{
/* Error occurred while writing data in Flash memory */
return (FLASHIF_WRITING_ERROR);
}
}
return (FLASHIF_OK);
}
